| PART |
Description |
Maker |
| 2SK210 2SK210-BL |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
|
TOSHIBA
|
| FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
| UPD30100GC-40-7EA |
Transmitter; Package: PG-TSSOP-16; Frequency Band: 315.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 5.0 dBm; Temperature Range: -40.0 - 125.0 °C
Transmitter; Package: PG-TSSOP-16; Frequency Band: 315.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 5.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
|
Infineon Technologies AG
|
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| SST5912T1 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
|
CALOGIC LLC
|
| BF246A BF246B BF246C BF247C BF247A BF247B |
N-channel silicon junction field-effect transistors UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BF998RAW-GS08 BF998RBW-GS08 BF998A-GS08 BF998RA-GS |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
VISHAY SEMICONDUCTORS
Vishay Siliconix
|
| CHV2242C |
Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
United Monolithic Semiconductors
|
| 3SK295ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
| SKY77197 |
Dual-Band PA Module for WCDMA / HSDPA Band I (1920 - 1980 MHz) and Band V (824 - 849 MHz)
|
Skyworks Solutions Inc.
|
